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2SK4022 Dataheets PDF



Part Number 2SK4022
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK4022 Datasheet2SK4022 Datasheet (PDF)

www.DataSheet4U.com 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 5.2±0.2 1.5±0.2 Unit: mm 0.6 MAX. • • • • • 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) 1.6 5.5±0.2 0.9 4.1±0.2 5.7 1.1±0..

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www.DataSheet4U.com 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 5.2±0.2 1.5±0.2 Unit: mm 0.6 MAX. • • • • • 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) 1.6 5.5±0.2 0.9 4.1±0.2 5.7 1.1±0.2 0.6 MAX 2.3 2.3 2.3±0.2 0.6±0.15 0.6±0.15 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 3 6 20 36.2 3 2 150 −55~150 A W mJ A mJ °C °C Unit V V V 0.8 MAX. 1.1 MAX. 1 2 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-21 www.DataSheet4U.com 2SK4022 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf VDD≒100 V toff Qg Qgs Qgd VDD≒200 V, VGS = 10 V, ID = 3 A Duty ≤ 1%, tw = 10 μs ⎯ ⎯ ⎯ ⎯ 30 12 6 6 Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 4.7 Ω ID = 1.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.5 A VDS = 10 V, ID = 1.5 A Min ⎯ ⎯ 250 1.5 ⎯ 0.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.2 2.2 267 32 98 5 20 5 Max ±10 100 ⎯ 3.5 1.7 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 67 Ω ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 125 470 Max 3 6 −2.0 ⎯ ⎯ Unit A A V ns nC Marking K4022 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 www.DataSheet4U.com 2SK4022 ID – VDS 3 Common source Tc = 25°C Pulse test 15 2 4.2 VGS = 4 V 1 10 8 6 6 4.6 Common source Tc = 25°C Pulse test ID – VDS 15 10 8 5 4 6 5.5 4.4 Drain current ID (A) Drain current ID (A) 4.5 2 VGS = 4 V 0 0 2 4 6 0 0 10 20 30 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 6 Common source VDS = 10 V Pulse test 10 VDS – VGS Common source Tc = 25°C Pulse test VDS (V) Drain-source voltage 5 8 Drain current ID (A) 4 6 3A 4 3 2 25 Tc = −55°C 100 1 2 ID = 1 A 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 10 Common source VDS = 10 V Pulse test Tc = −55°C 25 3 10 5 Common source Tc = 25°C VGS = 10 V Pulse test RDS (ON) − ID (S) 5 3 Forward transfer admittance ⎪Yfs⎪ 1 Drain-source ON-resistance RDS (ON) (Ω) 3 5 10 100 1 0.5 0.3 0.5 0.3 0.1 0.1 0.3 0.5 1 0.1 0.01 0.03 0.1 0.3 1 3 10 Drain current ID (A) Drain current ID (A) 3 2006-11-21 www.DataSheet4U.com 2SK4022 RDS (ON) – Tc (Ω) 5 Common source VGS = 10 V Pulse test ID = 3 A 3 ID = 1 A 2 100 Common source Tc = 25°C Pulse test IDR – VDS Drain-source ON-resistance RDS (ON) 4 Drain reverse current IDR (A) 10 1 VGS = 10 V 1 5 3 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −.


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