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TK80D08K3 www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80D08K3
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
10.0±0.3 9.5±0.2 A 0.6±0.1 Ф3.65±0.2
Unit: mm
3.2 2.8 1.1±0.15 2.8Max. 9.0 15.0±0.3 0.75±0.25 12.8±0.5 +0.25 0.57 -0.10
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 80 320 100 443 80 10 150 −55 to 150 Unit V V V A W mJ A mJ °C °C
0.62±0.15 Ф0.2 M A
1
2
3
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain (Heat Sink) 3: Source
4.5±0.2
2.54
2.54
2.53±0.2
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-10V1A
Weight: 1.35 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.25 83.3 Unit °C/W °C/W
Internal Connection
2
Note 1: Ensure that the channel and lead temperatures do not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 100 μH, IAR = 80 A, RG = 1 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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TK80D08K3 www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance (Note 4) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ID = 40 A VOUT RL = 0.75 Ω VDS = 10V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±20 V, VDS = 0 V VDS = 75 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 40A VDS = 10 V, ID = 40 A Min ⎯ ⎯ 75 50 2.0 ⎯ 100 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.6 200 8200 770 1140 30 Max ±1 10 ⎯ ⎯ 4.0 4.5 ⎯ ⎯ ⎯ pF Unit μA μA V V mΩ S
⎯
10 V
⎯ ⎯ ⎯
ns
⎯ ⎯ ⎯
⎯ ⎯
Turn-ON time Switching time Fall time
ton
VGS 0V
55
4.7 Ω
tf
VDD ≈ 30 V Duty ≤ 1%, tw = 10 μs
33
⎯ ⎯
⎯ ⎯ ⎯ ⎯ nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge Gate switch charge
toff Qg Qgs1 Qgd Qsw
150 175 40 65 80
VDD ≈ 60 V, VGS = 10 V, ID = 80A
⎯ ⎯ ⎯
Note 4:
Measured at lead standoff.
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 80 A, VGS = 0 V IDR = 80 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ −0.9 60 60 Max 80 320 −1.2 ⎯ ⎯ Unit A A V ns nC
Marking
Note 5: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K80D08K3
Part No. (or abbreviation code) Lot No. Note 5
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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ID – VDS
50 10 40 8 6 30 5 5.2 5.5 4.8 Common source Tc = 25°C Pulse Test 300 10 6 8
ID – VDS
5.5 Common source Tc = 25°C Pulse Test 5.2 5
250
(A)
(A) ID Drain current
4.6
200
ID
Drain current
150 4.8 100 4.6 50 VGS = 4 V 4.2 4.4
20
4.4
10
4.2 VGS = 4 V
0 0
0.2
0.4
0.6
0.8
1.0
0
0
2
4
6
8
10
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID – VGS
200 Common source VDS = 10 V Pulse Test 1
VDS – VGS
Common source Tc = 25°C Pulse Test
160
(V) VDS Drain-source voltage
0.8
ID (A)
120
0.6
Drain current
80 100 40 Tc = −55°C 0 25
0.4 ID = 80 A 0.2 40 20
0
2
4
6
8
10
0
0
4
8
12
16.