BUK9609-75A

BUK9609-75A N-channel TrenchMOS logic level FET Rev. 03 — 22 September 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 5 V; Tj = 25 °C; see Figure 3; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 15 7.6 9.95 9 mΩ mΩ ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 562 mJ NXP Semiconductors BUK9609-75A w w w . D a t a S h e e t 4 U . c o N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pi...