BLF7G20LS-160P

www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (dB) 17.5 18.5 ηD (%) 57 43 ACPR400k (dBc) −61 ACPR600k (dBc) −74 EVMrms (%) 2.5 1.2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications „ RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range www.DataSheet4U.com NXP Semiconductors BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline Graphic symbol BLF7G20L-160P (SOT1121A) 1 2 1 3 5 3 4 2 sym117 5 4 BLF7G20LS-16...