DMN26D0UDJ

NEW PRODUCT DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V ID TA = +25°C 240mA 180mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power Management Functions Features  Dual N-Channel MOSFET  Low On-Resistance:  3.0Ω@ 4.5V  4.0Ω@ 2.5V  6.0Ω@1.8V  10Ω@1.5V  Very Low Gate Threshold Voltage, 1.05V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package  ESD Protected Gate (HBM 300V)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SOT963  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.0027 grams (Approximate) SOT963 D1 G2 S2 ESD PROTECTED Top View S1 G1 D2 Top View Schematic and Transistor Diagram Ordering Information (Note 4) Notes: Part Number DMN26D0UDJ-7 Case SOT963 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diod...