ZXMS6001N3

www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance Max nominal load current (a) Min nominal load current (c) Clamping Energy 675mΩ 1.1A (VIN = 5V) 0.7A (VIN = 5V) 550mJ Description Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is S recommended for best thermal performance. S D IN Features Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) Load dump protection (actively protects load) Low input current SOT223 Ordering information Device ZXMS6001N3TA Package SOT223 Part mark ZXMS6001 Reel size (inches) 7 Tape width (mm) 12 embossed Quantity per reel 1,000 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com www.DataSheet4U.com ZXMS6001N3 Functional block diagram D Over Voltage Protection IN Human body ESD protection Over current protection Logic Over temperature protection dV/dt limitation S Applications and information Especially suited for loads with a high in-...