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PD -97450 www.DataSheet4U.com
IRFH5004PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 2.6 73 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits
Features and Benefits
Features
Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH5004TRPBF IRFH5004TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel
Note
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ±20 28 23 100 100 400 3.6 250 0.029 -55 to + 150 Units V
g g
c
h h
A
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
g
Notes through are on page 8
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1
02/08/2010
IRFH5004PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 40 ––– ––– 2.0 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.1 ––– -5.6 ––– ––– ––– ––– ––– 73 15 6.1 27 25 33.1 27 1.2 13 39 28 16 4490 970 460
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Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.6 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 40V, VGS = 0V 20 µA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A 110 ––– VDS = 20V VGS = 10V ––– nC ––– ID = 50A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V
e
––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– –––
Ω ns VDD = 20V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 20V ƒ = 1.0MHz Max. 340 50 Conditions MOSFET symbol showing the integral reverse
G S
pF
Avalanche Characteristics
EAS IAR
Diode Characteristics
IS ISM VSD trr Qrr ton
d
Min. ––– ––– Typ. ––– –––
Units mJ A
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Max. Units 100 A 400
h
D
Ã
––– ––– 1.0 V ––– 32 48 ns ––– 100 150 nC Time is dominated by parasitic Inductance
p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 300A/µs
e
eÃ
Thermal Resistance
RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
f f
Parameter
g g
Typ. ––– ––– ––– –––
Max. 0.5 15 35 33
Units °C/W
2
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IRFH5004PbF
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1000
TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V
1000
TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
≤60µs PULSE WIDTH
1 Tj = 25°C
10 3.8V
≤60µs PULSE WIDTH
Tj = 150°C 1 0.1 1 10 100
3.8V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.8 ID = 50A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 150°C TJ = 25°C
1 VDS = 15V ≤60µs PULSE WIDTH 0.1 2 3 4 5 6 7
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds.