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IRFH5004PBF Dataheets PDF



Part Number IRFH5004PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFH5004PBF DatasheetIRFH5004PBF Datasheet (PDF)

PD -97450 www.DataSheet4U.com IRFH5004PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 40 2.6 73 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout.

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PD -97450 www.DataSheet4U.com IRFH5004PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 40 2.6 73 1.2 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5004TRPBF IRFH5004TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 1000 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ±20 28 23 100 100 400 3.6 250 0.029 -55 to + 150 Units V g g c h h A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through † are on page 8 www.irf.com 1 02/08/2010 IRFH5004PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 40 ––– ––– 2.0 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.1 ––– -5.6 ––– ––– ––– ––– ––– 73 15 6.1 27 25 33.1 27 1.2 13 39 28 16 4490 970 460 www.DataSheet4U.com Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.6 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150µA ––– mV/°C VDS = 40V, VGS = 0V 20 µA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A 110 ––– VDS = 20V VGS = 10V ––– nC ––– ID = 50A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V e ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Ω ns VDD = 20V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 20V ƒ = 1.0MHz Max. 340 50 Conditions MOSFET symbol showing the integral reverse G S pF Avalanche Characteristics EAS IAR Diode Characteristics IS ISM VSD trr Qrr ton ™ d Min. ––– ––– Typ. ––– ––– Units mJ A Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 100 A 400 h D Ù ––– ––– 1.0 V ––– 32 48 ns ––– 100 150 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 300A/µs e eà Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f Parameter g g Typ. ––– ––– ––– ––– Max. 0.5 15 35 33 Units °C/W 2 www.irf.com IRFH5004PbF www.DataSheet4U.com 1000 TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V 1000 TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 ≤60µs PULSE WIDTH 1 Tj = 25°C 10 3.8V ≤60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 3.8V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.8 ID = 50A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V ID, Drain-to-Source Current (A) 100 10 T J = 150°C TJ = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds.


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