3N80

UNISONIC TECHNOLOGIES CO., LTD 3N80 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-TF2-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TMS4-R 3N80G-TMS4-R 3N80L-TN3-R 3N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S4 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-283.J 3N80  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-283.J 3N80 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) Gate-Source Voltage VDGR VGSS 800 ±30 V V Gate-Source Breakdown Voltage (IGS=±1mA) Insulation Withstand Voltage (DC...