AOB405

www.DataSheet4U.com AOB405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meets ROHS & Sony 259 specifications). AOB405L is a Green Product ordering option. AOB405 and AOB405L are electrically identical. Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -40 ±20 -12 -12 -30 -12 30 50 25 2.3 1.5 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11 45 2.5 Max 16 54 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOB405 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted)...