DMG9926UDM

NEW PRODUCT Features Low Gate Charge Low RDS(ON): 28mΩ @VGS = 4.5V 32mΩ @VGS = 2.5V 40mΩ @VGS = 1.8V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) S1 DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Mechanical Data Case: SOT-26 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) SOT-26 D1 D2 G1 D1/D2 D1/D2 G1 TOP VIEW S2 G2 TOP VIEW Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Drain Current (Note 2) TA = 25°C TA = 70°C Symbol VDSS VGSS ID IDM G2 S1 S2 Equivalent Circuit Value Unit 20 V ±8 V 4.2 3.2 A 30 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t ≤10s Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 0.98 128 -55 to +150 Notes: 1. Device mounted on 1"x1", FR-4 PC boa...