EID0910A1-12

www.DataSheet4U.com EID0910A1-12 UPDATED 07/12/2007 9.50-10.50 GHz 12-Watt Internally Matched Power FET Excelics EID0910A1-12 .827±.010 .669 .120 MIN FEATURES 9.50– 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 9.50-10.50GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 9.50-10.50GHz Caution! ESD sensitive device. MIN 40 7.0 TYP 41 8.0 MAX UNITS dBm dB ±0.6 28 3800 6400 -1.2 2.5 4300 8000 -2.5 3.0 o dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 64 mA Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power...