AOB440

www.DataSheet4U.com AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B C Maximum 60 ±20 75 75 150 80 320 150 75 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B A A t≤10s Steady-State Steady-State Symbol RθJA RθJA RθJC Typ 8 35 0.7 Max 12 45 1 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB440 www.DataSheet4U.com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain ...