Preliminary Technical Information
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GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
Medium Speed Low Vs...
Preliminary Technical Information
www.DataSheet4U.com
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching
IXGH36N60B3C1
VCES IC110 VCE(sat) tfi(typ)
TO-247
= = ≤ =
600V 36A 1.8V 100ns
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 36 20 200 ICM = 80 @ ≤ VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A W °C °C °C °C °C Nm/lb.in. g Applications
z
G
C
E
(TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Features
z
z z z
Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel
Schottky Diode International Standard Package
Advantages
z z
1.6mm (0.062 in.) from Case for 10 seconds Plastic Body for 10 seconds Mounting Torque
300 260 1.13/10 6
High Power Density Low Gate Drive Requirement
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ =125°C VCE = 0V, VGE = ± 20V IC = 30A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max. 3.0 5.0 35 1.25 ±100 1.5 1.8 V μA mA nA V
z z z z z z z
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