Document
Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 30A 3.0V 47ns
High Speed PT IGBTs for 40 - 100kHz Switching
TO-263 (IXGA)
G E C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 30 13 150 ICM = 60 @ ≤ VCES 220 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb.in. g g g G C E
C (TAB)
V V V V A A A A A
TO-220 (IXGP)
G
C
C (TAB) E
TO-247 (IXGH)
G = Gate E = Emitter Features
C = Collector TAB = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 3.5 5.5 25 V μA
High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100142A(06/09)
300 μA ±100 nA 2.6 1.8 3.0 V V
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1
Symbol Test Conditions Characteristic Values
www.DataSheet4U.com IXGP30N60C3C1 IXGH30N60C3C1
(TJ = 25°C Unless Otherwise Specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS TO-220 TO-247 Inductive Load, TJ = 125°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 Inductive Load, TJ = 25°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 IC = 20A, VGE = 15V, VCE = 0.5 • VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 20A, VCE = 10V, Note 1
Min.
9
Typ.
16 1075 196 29 38 8 17 17 20 0.12 42 47 0.09 16 21 0.16 70 90 0.33 0.50 0.21
Max.
S pF pF pF nC nC nC ns ns mJ 75 0.18 ns ns mJ ns ns mJ ns ns mJ 0.56 °C/W °C/W °C/W
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF RthJC IF = 10A, VGE = 0V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
1.10 °C/W
Notes
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change .