IXFN26N90

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G D VDSS 900 V 900 V ID (cont) 26 A 25 A RDS(on) 0.30 W 0.33 W trr 250 ns 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 26N90 25N90 26N90 25N90 26N90 25N90 S S Maximum Ratings 900 900 ±20 ±30 26 25 104 100 26 25 64 3 5 600 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A miniBLOC, SOT-227 B (IXFN) E153432 S G S D A A mJ J V/ns W °C °C °C °C V~ V~ Features G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source International standard package miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low package inductance Fast intrinsic Rectifier Applications Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 5.0 ±200 TJ = 25°C TJ = 125°C 26N90 25...