IXFX260N17T

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK260N17T IXFX260N17T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 260A 6.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 260 160 700 100 3 1670 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) (TAB) Features z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 170 2.5 5.0 ± 200 V V nA z Easy to Mount Space Savings High Power Density Applications z z z z 50 μA 5 mA 6.5 mΩ z z z z Synchronous Recificatio...