IXFX230N20T

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20T IXFX230N20T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 200V 230A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 230 160 630 100 3 20 1670 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source (TAB) D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) Features z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density Applications z z 50 µA 3 mA 7.5 mΩ Synchronous Recification DC-DC Conver...