NDP03N60Z

www.DataSheet4U.com NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 600 V RDS(on) (TYP) @ 1.2 A 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.0 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 17) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 3.0 (Note 1) 1.9 (Note 1) 12 (Note 1) 25 NDF NDP 600 3.0 1.9 12 78 30 100 3000 2.6 1.65 10 61 NDD Unit V A A G (1) A W V mJ V V 4 4 dv/dt IS TL TJ, Tstg 4.5 (Note 2) 3.0 260 − 55 to 150 V/ns A °C °C 1 2 1 1 3 2 2 3 3 3 DPAK TO−220FP TO−220AB IPAK CASE 221D CASE 221A CASE 369D CASE 369AA STYLE 2 STYLE 1 STYLE 5 STYLE 2 1 2 S (3) N−Channel D (2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum ...