DirectFET Power MOSFET
PD - 97485
IRF6706S2TRPbF IRF6706S2TR1PbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Coolin...
Description
PD - 97485
IRF6706S2TRPbF IRF6706S2TR1PbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested
D G S D
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DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.4nC
RDS(on)
3.0mΩ@10V
RDS(on)
5.2mΩ@4.5V
25V max ±20V max 13nC
Qgs2
1.8nC
Qrr
21nC
Qoss
9.5nC
Vgs(th)
1.8V
Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4
S1
DirectFET ISOMETRIC
L4
L6
L8
Description
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reductio...
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