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PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010 Product data sheet
1...
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PBSS4041NZ
60 V, 7 A
NPN low VCEsat (BISS)
transistor
Rev. 01 — 31 March 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 6 A; IB = 600 mA
[1]
Conditions open base
Min -
Typ 17.5
Max 60 7 15 25
Unit V A A mΩ
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
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NXP Semiconductors
PBSS4041NZ
60 V, 7 A
NPN low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector
1 2 3 3
sym016
Simplified outline
4
Graphic symbol
2, 4 1
3. Ordering information
Table 3. Ordering information Package Name PBSS4041NZ SC-73 De...