PBSS4021NZ

www.DataSheet4U.com PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ. 1.2 Features and benefits „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 6 A; IB = 600 mA [1] Conditions open base Min - Typ 14 Max 20 8 20 20 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. www.DataSheet4U.com NXP Semiconductors PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym016 Simplified outline 4 Graphic symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name PBSS4021NZ SC-73 Desc...