MRF8P20160HSR3

Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 hD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) -29.8 -30.1 -30.6 MRF8P20160HSR3 1880-2025 MHz, 37 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 3 dB Compression Point ] 160 Watts CW 2025 MHz Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2025 MHz Gps (dB) 15.3 hD (%) 44.0 Output PAR (dB) 6.8 ACPR (dBc) -30.0 CASE 465H-02, STYLE 1 NI-780S-4 RFinA/VGSA 3 1 RFoutA/VDSA Features Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capab...