MWE6IC9080NBR1

Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.0 28.8 28.5 PAE (%) 49.7 51.6 52.3 MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW Pout Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg. Gps (dB) 30.0 30.0 29.5 PAE (%) 37.0 37.8 38.0 SR1 @ 400 kHz (dBc) --62 --62 --62 SR2 @ 600 kHz (dBc) --75 --75 --75 EVM (% rms) 0.8 1.2 1.5 CASE 1618-02 TO-270 WB-14 PLASTIC MWE6IC9080NR1 CASE 1621-02 TO-270 WB-14 GULL PLASTIC MWE6IC9080GNR1 Frequency 920 MHz 940 MHz 960 MHz Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters On--Chip Matching...