HMC902
v00.0310
www.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz
Features
Noise Figure: 1.6 dB Gain: 20 dB P1dB Output Power: 16 dBm Supply Voltage: +3.5 V @ 80 mA Output IP3: 28 dBm 50 Ohm matched Input/Output Die Size: 1.33 x 1.04 x 0.1 mm
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
This HMC902 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation • ISM, UNII & WCS
Functional Diagram
General Description
The HMC902 is a GaAs MMIC Low Noise Amplifier, which operates between 5 and 10 GHz. This selfbiased LNA provides 20 dB of small signal gain, 1.6 dB noise figure, and output IP3 of +28 dBm, while requiring only 80 mA from a +3.5V supply. The P1dB output power of 16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC902 also features I/Os that are DC blocked and internally matched to 50 Ohms for ease of integration into multi-chip-modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mils) length.
Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [1]
Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.) [1] Vgg1 = Vgg2 = 0V for normal, self-biased operation. 17 Min. Typ. 5 - 10 20 0.01 1.6 12 15 16 17.5 28 80 2.1 Max. Units GHz dB dB / °C dB dB dB dBm dBm dBm mA
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC902
v00.0310
www.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz
Broadband Gain & Return Loss
25
Gain vs. Temperature
25
+25C +85C -55C
7
AMPLIFIERS - LOW NOISE - SMT
7-2
15 RESPONSE (dB) GAIN (dB) 11 13
S21 S11 S22
23
5
21
-5
19
-15
17
-25 3 5 7 9 FREQUENCY (GHz)
15 4 5 6 7 8 9 10 11 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 4 5 6 7 8 9 10 11 FREQUENCY (GHz)
+25C +85C -55C
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 5 6 7 8 9 10 11 FREQUENCY (GHz)
+25C +85C -40C
Noise Figure vs. Temperature
6 5 NOISE FIGURE (dB) 4 3 2 1 0 4 5 6 7 8 9 10 11 FREQUENCY (GHz)
+25C +85C -55C
Output IP3 vs. Temperature
35 30 25 IP3 (dBm) 20 15 10 5 5 6 7 8 9 10 FREQUENCY (GHz)
+25C +85C -40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC902
v00.0310
www.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature [1]
25
Psat vs. Temperature [1]
25
20 P1dB (dBm) Psat (dBm)
20
15
+25C +85C -55C
15
+25C +85C -55C
10
10
5
5
0 4 5 6 7 8 9 10 11 FREQUENCY (GHz)
0 5 6 7 8 9 10 11 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 4 5 6 7 8 9 10 11 FREQUENCY (GHz)
+25C +85C -55C
Power Compression @ 7 GHz
24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -21
Pout Gain PAE
-18
-15
-12
-9
-6
-3
0
3
INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 7 GHz
22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 3 3.5 Vdd (V) 4
NF P1dB GAIN
7 6 5 4 3 2 1 0 NOISE FIGURE (dB)
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC902
v00.0310
www.DataSheet4U.com
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz
Absolute Maximum Ratings
Drain Bias Voltage RF Input Power Gate Bias Voltage, Vgg1 Gate Bias Voltage, Vgg2 Channel Temperature Continuous Pdiss (T = 85 °C) (derate 7 mW/°C above 85 °C) Thermal Resistance (Channel to die bottom) Storage Temperature Operating Temperature +4.5V +10 dBm -0.8V to +0.2V -0.8V to +0.2V 175 °C 0.63 W 143.8 °C/W -65 to +150 °C -40 to +85 °C
7
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002
Die Packaging Information [1]
Standard GP-2 (Gel Pack) Alternate [2]
[1] Refer to the “Packaging Info.