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HMC902 Dataheets PDF



Part Number HMC902
Manufacturers Hittite Microwave
Logo Hittite Microwave
Description GaAs pHEMT MMIC LOW NOISE AMPLIFIER
Datasheet HMC902 DatasheetHMC902 Datasheet (PDF)

HMC902 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz Features Noise Figure: 1.6 dB Gain: 20 dB P1dB Output Power: 16 dBm Supply Voltage: +3.5 V @ 80 mA Output IP3: 28 dBm 50 Ohm matched Input/Output Die Size: 1.33 x 1.04 x 0.1 mm 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications This HMC902 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation • ISM, UNII & WCS Functional Diagram General Description Th.

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HMC902 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz Features Noise Figure: 1.6 dB Gain: 20 dB P1dB Output Power: 16 dBm Supply Voltage: +3.5 V @ 80 mA Output IP3: 28 dBm 50 Ohm matched Input/Output Die Size: 1.33 x 1.04 x 0.1 mm 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications This HMC902 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation • ISM, UNII & WCS Functional Diagram General Description The HMC902 is a GaAs MMIC Low Noise Amplifier, which operates between 5 and 10 GHz. This selfbiased LNA provides 20 dB of small signal gain, 1.6 dB noise figure, and output IP3 of +28 dBm, while requiring only 80 mA from a +3.5V supply. The P1dB output power of 16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC902 also features I/Os that are DC blocked and internally matched to 50 Ohms for ease of integration into multi-chip-modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mils) length. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [1] Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.) [1] Vgg1 = Vgg2 = 0V for normal, self-biased operation. 17 Min. Typ. 5 - 10 20 0.01 1.6 12 15 16 17.5 28 80 2.1 Max. Units GHz dB dB / °C dB dB dB dBm dBm dBm mA 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC902 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz Broadband Gain & Return Loss 25 Gain vs. Temperature 25 +25C +85C -55C 7 AMPLIFIERS - LOW NOISE - SMT 7-2 15 RESPONSE (dB) GAIN (dB) 11 13 S21 S11 S22 23 5 21 -5 19 -15 17 -25 3 5 7 9 FREQUENCY (GHz) 15 4 5 6 7 8 9 10 11 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 4 5 6 7 8 9 10 11 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 5 6 7 8 9 10 11 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 6 5 NOISE FIGURE (dB) 4 3 2 1 0 4 5 6 7 8 9 10 11 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C -40C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC902 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature [1] 25 Psat vs. Temperature [1] 25 20 P1dB (dBm) Psat (dBm) 20 15 +25C +85C -55C 15 +25C +85C -55C 10 10 5 5 0 4 5 6 7 8 9 10 11 FREQUENCY (GHz) 0 5 6 7 8 9 10 11 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 4 5 6 7 8 9 10 11 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 7 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -21 Pout Gain PAE -18 -15 -12 -9 -6 -3 0 3 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 7 GHz 22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 3 3.5 Vdd (V) 4 NF P1dB GAIN 7 6 5 4 3 2 1 0 NOISE FIGURE (dB) 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC902 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage, Vgg1 Gate Bias Voltage, Vgg2 Channel Temperature Continuous Pdiss (T = 85 °C) (derate 7 mW/°C above 85 °C) Thermal Resistance (Channel to die bottom) Storage Temperature Operating Temperature +4.5V +10 dBm -0.8V to +0.2V -0.8V to +0.2V 175 °C 0.63 W 143.8 °C/W -65 to +150 °C -40 to +85 °C 7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Info.


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