RFPD2580

DRAFT DRAFT RFPD2580 GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz The RFPD2580 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1200MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. V+ INPUT OUTPUT Ordering Information RFPD2580 Box with 50 pieces Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Storage Temperature Operating Mounting Base Temperature Rating 75 30 -40 to +100 -30 to +100 Unit dBmV V °C °C RFPD2580 Package: SOT-115J Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 22.5dB Min. Gain at 1200MHz ■ 450mA Max. at 24VDC Applications ■ 45MHz to 1200MHz CATV Amplifier Systems Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC...