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EMP311

Excelics Semiconductor

21.0 - 24.0 GHz Power Amplifier MMIC

www.DataSheet4U.com EMP311 ISSUED DATE: 09-10-04 21.0 – 24.0 GHz Power Amplifier MMIC FEATURES • • • • • • 21.0 – 24....


Excelics Semiconductor

EMP311

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www.DataSheet4U.com EMP311 ISSUED DATE: 09-10-04 21.0 – 24.0 GHz Power Amplifier MMIC FEATURES 21.0 – 24.0 GHz Operating Frequency Range 26.5dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 16.5dBm Dimension: 1130um X 2250um Thickness: 75um ± 13um APPLICATIONS Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=380mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL Idss VDD Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 16.5dBm Input Return Loss Output Return Loss Saturate Drain Current Power Supply Voltage Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature -35 VDS =3V, VGS =0V 429 MIN 21.0 25.0 11.0 26.5 14.0 -40 -10 -8 536 7 18 +85 -37 -8 -6 644 8 o TYP MAX 24.0 UNITS GHz dBm dB dBc dB dB mA V C/W ºC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation VALUE 8V -4 V Idss 7.5mA @ 3dB compression 150°C -65/150°C 6.3W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satis...




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