FDME1024NZT

www.DataSheet4U.com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.4 A, 66 mΩ Features „ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A „ Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A „ Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A „ Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600V (Note3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. Applications „ Baseband Switch „ Load Switch D2 G1 S1 Pin 1 D1 S2 G2 D1 D2 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 20 ±8 3.4 6 1.3 0.6 -55 to +150 Units V V A W °C Operating and Storage Junction Temp...