BLS6G2933P-200

www.DataSheet4U.com BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit. Mode of operation f (GHz) class-AB; tp = 300 μs; δ = 10 % 2.9 to 3.3 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. VDS (V) 32 PL(1dB) (W) 220 Gp (dB) 11 ηD (%) 45 IDq (mA) 100 1.2 Features and benefits „ „ „ „ „ „ „ Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Matched to 50 Ω for ease of use Extreme low weight pallet (environmental friendly and easy to use) 1.3 Applications „ General S-Band radar applications www.DataSheet4U.com NXP Semiconductors BLS6G2933P-200 LDMOS S-Band radar pallet amplifier 2. Pinning information 2.1 Pinning GATE 1 6 DRAIN RF_IN 2 5 RF_OUT GATE(OPT) 3 4 DRAIN(OPT) 001aal762 Top view. Fig 1. Preliminary pin configuration 2.2 Pin description Table 2. Symbol GATE RF_IN GATE(OPT) DRAIN(OPT) RF_OUT DRAIN [1] Pin description[1] Pin 1 2 3 4 5 6 Description gate RF input optional gate optional drain RF output drain The case is a source/ground connection. 3. Ordering information Table 3. Ordering informa...