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BUK664R6-40C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 21 May 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 40 80 158 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 3.6 4.6 mΩ
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NXP Semiconductors
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 226 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 80 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 14; see Figure 15
Dynamic characteristics QGD 25.9 nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK664R6-40C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
BUK664R6-40C
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© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 21 May 2010
2 of 14
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NXP Semiconductors
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj VGS IS ISM EDS(AL)S Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature gate-source voltage source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy DC Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 80 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unc.