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BUK664R6-40C Dataheets PDF



Part Number BUK664R6-40C
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK664R6-40C DatasheetBUK664R6-40C Datasheet (PDF)

www.DataSheet4U.com BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitab.

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www.DataSheet4U.com BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 80 158 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 3.6 4.6 mΩ www.DataSheet4U.com NXP Semiconductors BUK664R6-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 226 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 80 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 14; see Figure 15 Dynamic characteristics QGD 25.9 nC [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK664R6-40C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number BUK664R6-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 01 — 21 May 2010 2 of 14 w w w . D a t a S h e e t 4 U . c o m NXP Semiconductors BUK664R6-40C N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj VGS IS ISM EDS(AL)S Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature gate-source voltage source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy DC Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 80 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unc.


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