BLF7G22LS-250P

www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 ηD (%) 30 ACPR (dBc) −28[1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range www.DataSheet4U.com NXP Semiconductors BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline Graphic symbol BLF7G22L-250P (SOT539A) 1 2 ...