LRB521S-30T1

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplictions LRB521S-30T1 1 Low current rectification and high speed switching zFeatures Extremelysmall surface mounting type. (SC-79/SOD523) IO=200mA guaranteed despite the size. Low VF.(VF=0.40V Typ. At 200mA) zConstruction silicon epitaxial planar 2 SOD523/SC-79 MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature *60Hz for 1 Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40~+125 Unit V mA A °C °C 1 Cathode 2 Anode DEVICE MARKING LRB521S-30T1=5M ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ Max. 0.50 30 Unit V µΑ Conditions IF=200mA VR=10V LRB521S-30T1 –1/3 LESHAN RADIO COMPANY, LTD. LRB521S-30T1 Electrical characteristic curves(Ta=25oC) 1 100m FORWARD CURRENT : I F (A)  REVERSE CURRENT : I R (A) 10m Ta=125oC 1m 75oC  5o C 75 o C 25 o C 10m 1m 100 10 1 0 100 10 1 25 oC 25oC Ta =1 2 25 o C 100n 10n 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 FORWARD VOLTAGE:VF(V) REVERSE VOLTAGE:VR(V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics 100 CAPACITANCE BETWEEN TERMINALS : CT(pF) 50 Ta=25oC f=1MHz 100 Io CURRENT (%) 20 10 5 80 60 40 20 0 0 2 1 0 2 4 6 8 10 12 14 25 50 75 100 125 REVERSE VOLTAGE : VR(V) AMBIENT TEMPERATURE : Ta(oC) Fig. 3 Capacitance between terminals characteristics  Fig. 4 Derating curve (mounting o...