NTJD4152P

NTJD4152P, NVJD4152P MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70−6 Equivalent) ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Applications Load/Power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −0.88 A −0.63 Power Dissipation (Note 1) Steady TA = 25°C PD State TA = 85°C 0.272 W 0.141 Continuous Drain Current (Note 2) t v 5 s TA = 25°C ID TA = 85°C −1.0 A −0.72 Power Dissipation (Note 2) t v 5 s TA = 25°C PD TA = 85°C 0.35 W 0.181 Pulsed Drain Current t ≤ 10 ms IDM ±3.0 A Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS −0.48 A TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit Junction−to−Ambient – Steady State RqJA 460 °C/W Junction−to−Ambient − t v 5 s RqJA 357 Junction−to−Lead – Steady State RqJL 226 Stresses exceeding th...