PDTA113ZT

www.DataSheet4U.com PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ZT. 1.2 Features s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs. 1.3 Applications s General purpose switching and amplification s Inverter and interface circuits s Circuit driver. 1.4 Quick reference data Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 10 Max −50 −100 Unit V mA kΩ kΩ 2. Pinning information Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector 3 R1 Simplified outline Symbol 3 1 R2 1 Top view 2 sym003 2 www.DataSheet4U.com Philips Semiconductors PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 3. Ordering information Table 3: Ordering information Package Name PDTA113ZT Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4: Marking Marking code [1] *AM Type number PDTA113ZT [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage po...