NTMS4700N

www.DataSheet4U.com NTMS4700N Power MOSFET 30 V, 14.5 A, Single N−Channel, SO−8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for High Side Control Applications High Speed Switching Capability Applications http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 6.0 mW @ 10 V 7.3 mW @ 4.5 V D ID MAX 14.5 A Notebook Computer Vcore Applications Network Applications DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain C rrent (Note 1) Current Steady State t v10 s Power Dissi Dissipation ation (Note 1) Steady State t v10 s Continuous Drain C Current t (N (Note t 2) Power Dissi Dissipation ation (Note 2) Pulsed Drain Current Steady y St t State TA = 25°C TA = 70°C TA = 25°C PD TA = 25°C 2.5 TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS ID 8.6 6.8 0.86 40 −55 to 150 2.5 280 W A °C A mJ A Symbol VDSS VGS ID Value 30 $20 11.5 9.2 14.5 1.56 W Unit V V A G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 8 1 SO−8 CASE 751 STYLE 12 4700N A L Y W Source Source Source Gate 4700N ALYW (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week 8 Drain Drain Drain Drain tp = 10 ms Operating and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IPK = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C ORDER...