DIM800DDS12-A000

DIM800DDS12-A000 Dual Switch IGBT Module DS5540-2.2 June 2005 (LN24051) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1200V 2.2V 800A 1600A Lead Free construction (measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DDS12-A000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Dual switch circuit diagram ORDERING INFORMATION Order As: DIM800DDS12-A000 Note: When ordering, please use the whole part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections (not to scale) . www.DataSheet4U.com Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1 /9 www.dynexsemi.com DIM800DDS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS – PER ARM Stresses above t...