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APT47N60HC3

Advanced Power Technology
Part Number APT47N60HC3
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Jun 23, 2010
Detailed Description APT47N60HC3 com 600V 33.5A 0.080Ω Super Junction MOSFET TO-258 C O OLMOS Power Semiconductors • Ultr...
Datasheet PDF File APT47N60HC3 PDF File

APT47N60HC3
APT47N60HC3

Overview
APT47N60HC3 com 600V 33.
5A 0.
080Ω Super Junction MOSFET TO-258 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-258 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified.
APT47N60HC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 33.
5 100.
5 ±20 ±30 240 1.
92 -55 to 150 260 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperat...


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