Document
www.DataSheet4U.com
PHP/PHB143NQ04T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 13 May 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Standard level threshold s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications.
1.4 Quick reference data
s VDS ≤ 40 V s Ptot ≤ 200 W s ID ≤ 75 A s RDSon ≤ 5.2 mΩ.
2. Pinning information
Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline
[1]
Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
mb
d
mb
g
mbb076
s
2 1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package
SOT404 (D2-PAK)
Philips Semiconductors
PHP/PHB143NQ04T
N-channel TrenchMOS™ standard level FET
www.DataSheet4U.com
3. Ordering information
Table 2: Ordering information Package Name PHP143NQ04T PHB143NQ04T TO-220AB D2-PAK Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 69 A; tp = 0.27 ms; VDD ≤ 40 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min −55 −55 Max 40 40 ±20 75 75 240 200 +175 +175 75 240 475 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 13165
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 13 May 2004
2 of 13
Philips Semiconductors
PHP/PHB143NQ04T
N-channel TrenchMOS™ standard level FET
www.DataSheet4U.com
120 Pder (%) 80
03aa16
120 Ider (%) 80
03aq60
40
40
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
ID I der = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
03aq53
Limit RDSon = VDS / ID tp = 10 µ s
102 100 µ s
DC
1 ms
10
10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13165
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 13 May 2004
3 of 13
Philips Semiconductors
PHP/PHB143NQ04T
N-channel TrenchMOS™ standard level FET
www.DataSheet4U.com
5. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Min Typ 60 50 Max 0.75 Unit K/W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient SOT78 SOT404 vertical in still air mounted on a printed-circuit board; minimum footprint. Symbol Parameter
5.1 Transient thermal impedance
1
03aq52
Zth(j-mb) (K/W)
δ = 0.5
0.2 0.1 10-1 0.05 0.02 single pulse P δ= tp T
tp T 10-2 10-4 10-3 10-2 10-1
t
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13165
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 13 May 2004
4 of 13
Philips Semiconductors
PHP/PHB143NQ04T
N-channel TrenchMOS™ standard level FET
www.DataSheet4U.com
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance outpu.