IXGR50N60B2D1

HiPerFAST IGBT ISOPLUS247TM TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) www.DataSheet4U.com = 600 V = 68 A = 2.2 V = 65 ns IXGR_B2 IXGR_B2D1 Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 110°C (50N60B2D1 Diode) TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 68 36 39 300 ICM = 100 200 -55 ... +150 150 -55 ... +150 V V V V A A A A A ISOPLUS247 (IXGR) G G = Gate E = Emitter Features z z z z z C E (ISOLATED TAB) C = Collector W °C °C °C V DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z 50/60 Hz RMS, t = 1m 5 2500 g 300 z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 50N60B2 50N60B2D1 5.0 50 650 ±100 TJ = 125°C 1.8 1.7 2.2 V µA µA nA V V z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA...