IXFV96N20PS

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 96N20P IXFT 96N20P IXFV 96N20P V DSS ID25 RDS(on) trr = 200 V = 96 A ≤ 24 mΩ ≤ 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Mounting torque (TO-247) TO-220 TO-247 TO-268 200 V 200 V ±20 V ±30 V 96 A G DS 75 A 225 A TO-268 (IXFT) 60 A 50 mJ 1.5 J G S 10 V/ns 600 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g 5 g PLUS220 (IXFV) G D S G = Gate S = Source Features (TAB) D (TAB) D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V I GSS V GS = ±20 V, DC V DS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 24 m Ω l Fast Intrinsic Diode l International standard packages l Unclamped Inductive Switching (UIS) rated l Low pa...