PolarHT Power MOSFET
PolarHTTM Power MOSFET
IXTK 120N20P IXTQ 120N20P
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = RDS(on) ≤
...
Description
PolarHTTM Power MOSFET
IXTK 120N20P IXTQ 120N20P
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 = RDS(on) ≤
200 V 120 A
22 m Ω
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
200
V
200
V
VGS VGSM
Continuous Transient
±20
V
±30
V
ID25 ID(RMS) IDM I
AR
EAR E
AS
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
T C
= 25° C
120
A
75
A
300
A
60
A
60
mJ
2.0
J
dv/dt
PD TJ TJM Tstg
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω
TC = 25° C
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
TL T
SOLD
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Md
Mounting torque
Weight
TO-3P TO-264
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
10
g
Characteristic Values Min. Typ. Max.
200
V
VGS(th)
VDS = VGS, ID = 250µA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175° C
25 µA 500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
22 m Ω
G D S
TO-3P (IXTQ)
(TAB)
G DS
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power d...
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