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APTGU180U120D Dataheets PDF



Part Number APTGU180U120D
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Single Switch
Datasheet APTGU180U120D DatasheetAPTGU180U120D Datasheet (PDF)

APTGU180U120D www.DataSheet4U.com Single Switch with Series diodes PT IGBT Power Module EK E C VCES = 1200V IC = 180A @ Tc = 80°C Application • Zero Current Switching resonant mode Features • G CK • • • E CK C Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery diodes - Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 po.

  APTGU180U120D   APTGU180U120D



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APTGU180U120D www.DataSheet4U.com Single Switch with Series diodes PT IGBT Power Module EK E C VCES = 1200V IC = 180A @ Tc = 80°C Application • Zero Current Switching resonant mode Features • G CK • • • E CK C Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery diodes - Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile EK G Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area 630A @ 960V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTGU180U120D – Rev 0 July, 2004 Max ratings 1200 250 180 630 ±20 1041 Unit V A V W APTGU180U120D www.DataSheet4U.com All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 750µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 6mA VGE = ±20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 1200 Typ Max 750 7500 3.9 6 ±250 Max Unit V µA V V nA Unit nF 3.3 3.0 3 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total gate Charge Qge Gate – Emitter Charge Qgc Gate – Collector Charge Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy X Eoff Turn-off Switching Energy Y X Eon2 includes diode reverse recovery Symbol Characteristic VRRM IF(A V) VF Typ 19.4 1.48 0.18 900 VGE = 15V VBus = 600V 126 IC = 180A 372 Inductive Switching (25°C) 16 VGE = 15V 20 VBus = 600V 94 IC = 180A 40 R G = 0.8Ω 4.5 7.8 4.08 Inductive Switching (125°C) 16 VGE = 15V 20 VBus = 600V 147 IC = 180A 75 R G = 0.8Ω 4.5 12.8 10.5 Y In accordance with JEDEC standard JESD24-1 Test Conditions 50% duty cycle Min nC ns mJ ns mJ Series diode ratings and characteristics Maximum Repetitive Reverse Voltage Min 1200 Tc = 70°C Typ 200 2 2.3 1.8 420 580 2.5 10.7 Max .


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