Document
APTGU180U120D
www.DataSheet4U.com
Single Switch with Series diodes PT IGBT Power Module
EK E C
VCES = 1200V IC = 180A @ Tc = 80°C
Application • Zero Current Switching resonant mode
Features •
G CK
• • •
E CK C
Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery diodes - Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
EK G
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C
Reverse Bias Safe Operating Area
630A @ 960V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTGU180U120D – Rev 0 July, 2004
Max ratings 1200 250 180 630 ±20 1041
Unit V A V W
APTGU180U120D
www.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 750µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 6mA VGE = ±20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min
1200
Typ
Max 750 7500 3.9 6 ±250 Max
Unit V µA V V nA Unit nF
3.3 3.0 3
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total gate Charge Qge Gate – Emitter Charge Qgc Gate – Collector Charge Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy X Eoff Turn-off Switching Energy Y X Eon2 includes diode reverse recovery Symbol Characteristic VRRM IF(A V) VF
Typ 19.4 1.48 0.18 900 VGE = 15V VBus = 600V 126 IC = 180A 372 Inductive Switching (25°C) 16 VGE = 15V 20 VBus = 600V 94 IC = 180A 40 R G = 0.8Ω 4.5 7.8 4.08 Inductive Switching (125°C) 16 VGE = 15V 20 VBus = 600V 147 IC = 180A 75 R G = 0.8Ω 4.5 12.8 10.5 Y In accordance with JEDEC standard JESD24-1 Test Conditions
50% duty cycle
Min
nC
ns
mJ
ns
mJ
Series diode ratings and characteristics
Maximum Repetitive Reverse Voltage
Min 1200 Tc = 70°C
Typ 200 2 2.3 1.8 420 580 2.5 10.7
Max
.