DIM1200NSM17-E000

DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004 FEATURES I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.0V 1200A 2400A *Measured at auxiliary terminals. External connection C1 C2 APPLICATIONS I Aux C High Reliability Inverters G G G Wind Turbines Motor Controllers UPS Systems G Aux E E1 E2 I Traction G G External connection Propulsion Drives Auxiliaries Fig. 1 Single switch circuit diagram The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM1200NSM17-E000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. E2 G C1 E1 C1 E2 C2 E2 - Aux Emitter C1 - Aux Collector ORDERING INFORMATION Order A...