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IXGX32N170AH1

IXYS

High-Voltage IGBT


Description
High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A ...



IXYS

IXGX32N170AH1

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