IXSH10N60B2D1

www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-247 TO-3P TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C g g °C G G C E (TAB) TO-247 (IXSH) TO-3P (IXSQ) C E (TAB) G = Gate E = Emitter C = Collector TAB = Collector 1.3/10 Nm/lb. in 5 5 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4.0 7.0 75 200 ± 100 2.5 V V µA µA nA V Features International standard package Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast fall time for switching speeds up to 20 kHz Applications AC motor speed control Uninterruptible power supplies (UPS) Welding Advantages High power density BVCES VGE(th) ICES IGES VCE(sat) IC IC = ...