PMEM4020APD

PMEM4020APD PNP transistor/Schottky rectifier module Rev. 01 — 4 October 2004 www.DataSheet4U. Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020AND. 1.2 Features s s s s s s 600 mW total power dissipation High current capability up to 2 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.3 Applications s s s s s DC-to-DC converters Inductive load drivers General purpose load drivers Reverse polarity protection circuits MOSFET drivers. 1.4 Quick reference data Table 1: Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current (DC) Conditions open base continuous; Ts ≤ 55 °C [1] Min - Typ - Max −40 −2 Unit V A PNP transistor Philips Semiconductors PMEM4020APD PNP transistor/Schottky rectifier module Quick reference data …continued Parameter continuous reverse voltage continuous forward current Conditions Min Typ Max 40 1 Unit V A w w w . D a t a S h e e t 4 U Table 1: Symbol VR IF [1] Schottky barrier rectifier Soldering point of collector or cathode tab. 2. Pinning information Table 2: Pin 1 2 3 4 5...