BUJ100LR

BUJ100LR Silicon diffused power transistor Rev. 01 — 12 August 2009 Product data sheet www.DataSheet4U.c 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability of 700 V 1.3 Applications „ Compact fluorescent lamps (CFL) „ Electronic lighting ballasts „ Inverters „ Off-line self-oscillating power supplies 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions DC; see Figure 1 Tlead ≤ 25 °C; see Figure 2 VBE = 0 V Min Typ Max 1 2.1 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics hFE VCE = 5 V; IC = 0.8 A; Tlead = 25 °C; see Figure 8 and 9 5 7.5 20 NXP Semiconductors BUJ100LR Silicon diffused power transistor www.DataSheet4U.com 2. Pinning information Table 2. Pin 1 2 3 B C E Pinning information Symbol Description base collector emitter B E 321 sym123 Simplified outline Graphic symbol C SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Package Name BUJ100LR TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number 4. Limiting values Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj VEBO Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector curren...