BLS6G3135-20

BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 ηD (%) 45 tr (ns) 20 tf (ns) 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 www.DataSheet4U.com LDMOS S-Band radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLS6G31...