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BLM6G22-30G

NXP Semiconductors

W-CDMA 2100 MHz to 2200 MHz power MMIC

BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 www.DataSheet4U.com Prelimin...


NXP Semiconductors

BLM6G22-30G

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BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29.5 ηD (%) 9 IMD3 (dBc) −48[1] ACPR (dBc) −50[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: N Average output power = 2 W N Power gain = 30 dB (typ) N Efficiency = 9 % N IMD3 = −48 dBc N ACPR = −50 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 Ohm, output partially matched) I High power gain I Designed for broadband operation (2100 MHz to 2200 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLM6G22-30; BL...




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