BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
www.DataSheet4U.com
Product data sheet...
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS
transistor
Rev. 01 — 22 October 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power
transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1]
[1] [2]
f (MHz) 2500 to 2700
VDS (V) 28
PL(AV) (W) 9
PL(M) Gp (W) 75 (dB) 17
ηD 23
ACPR885k ACPR1980k (dBc) −60[2] −50[2]
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N Average output power = 9 W N Power gain = 17 dB N Drain efficiency = 23 % N ACPR885 = −50.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Internally mat...