IXFK88N30P

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet IXFH 88N30P IXFK 88N30P VDSS ID25 www.DataSheet4U.com RDS(on) trr = 300 V = 88 A = 40 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) D (TAB) TO-264 (IXFK) G D S (TAB) D = Drain TAB = Drain G = Gate S = Source Features z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 40 V V nA µA µA mΩ Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved DS99216(12/04) I...